Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / UP0331200L
Manufacturer Part Number | UP0331200L |
---|---|
Future Part Number | FT-UP0331200L |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
UP0331200L Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 150MHz, 80MHz |
Power - Max | 125mW |
Mounting Type | Surface Mount |
Package / Case | SOT-665 |
Supplier Device Package | SSMini5-F2 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
UP0331200L Weight | Contact Us |
Replacement Part Number | UP0331200L-FT |
EMF17T2R
Rohm Semiconductor
EMF21T2R
Rohm Semiconductor
EMF22T2R
Rohm Semiconductor
EMF24T2R
Rohm Semiconductor
EMF8T2R
Rohm Semiconductor
EMH15T2R
Rohm Semiconductor
EMG8T2R
Rohm Semiconductor
EMG11T2R
Rohm Semiconductor
EMG5T2R
Rohm Semiconductor
EMA2T2R
Rohm Semiconductor
M7A3P1000-2FG484I
Microsemi Corporation
A3P400-FGG256
Microsemi Corporation
EP2C35F484C8
Intel
EP2AGZ350HF40I3N
Intel
XC2VP30-6FFG1152C
Xilinx Inc.
XC6SLX45T-N3CSG324I
Xilinx Inc.
LFEC6E-3FN256I
Lattice Semiconductor Corporation
LFEC6E-4F256I
Lattice Semiconductor Corporation
LCMXO2280C-4MN132I
Lattice Semiconductor Corporation
10M04DAU324I7G
Intel