Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMF8T2R
Manufacturer Part Number | EMF8T2R |
---|---|
Future Part Number | FT-EMF8T2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EMF8T2R Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Transistor Type | 1 NPN Pre-Biased, 1 NPN |
Current - Collector (Ic) (Max) | 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 270 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz, 320MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMF8T2R Weight | Contact Us |
Replacement Part Number | EMF8T2R-FT |
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