Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMF8T2R
Manufacturer Part Number | EMF8T2R |
---|---|
Future Part Number | FT-EMF8T2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EMF8T2R Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
Transistor Type | 1 NPN Pre-Biased, 1 NPN |
Current - Collector (Ic) (Max) | 100mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V / 270 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz, 320MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMF8T2R Weight | Contact Us |
Replacement Part Number | EMF8T2R-FT |
RN2907(T5L,F,T)
Toshiba Semiconductor and Storage
RN2908(T5L,F,T)
Toshiba Semiconductor and Storage
RN2909(T5L,F,T)
Toshiba Semiconductor and Storage
RN2910(T5L,F,T)
Toshiba Semiconductor and Storage
RN2911(T5L,F,T)
Toshiba Semiconductor and Storage
RN4901(T5L,F,T)
Toshiba Semiconductor and Storage
RN4901,LF
Toshiba Semiconductor and Storage
RN4902,LF
Toshiba Semiconductor and Storage
RN4903(T5L,F,T)
Toshiba Semiconductor and Storage
RN4904(T5L,F,T)
Toshiba Semiconductor and Storage