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TPN4R712MD,L1Q Image

Toshiba Semiconductor and Storage TPN4R712MD,L1Q

MFG Part Number
TPN4R712MD,L1Q
Available Quantity
77100 Pieces
Reference Price
USD 0.2184
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
U-MOSVI MOSFET P-CH 20V 36A 8TSON ADV
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
TPN4R712MD,L1Q.pdf
TPN4R712MD,L1Q Image

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TPN4R712MD,L1Q Specifications

Manufacturer Part Number TPN4R712MD,L1Q
Future Part Number FT-TPN4R712MD,L1Q
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series U-MOSVI
TPN4R712MD,L1Q Status (Lifecycle) In Stock
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 4.7 mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
TPN4R712MD,L1Q Weight Contact Us
Replacement Part Number TPN4R712MD,L1Q-FT

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