Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / SSM3K309T(TE85L,F)

Toshiba Semiconductor and Storage SSM3K309T(TE85L,F)

Name: SSM3K309T(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: SSM3K309T(TE85L,F)
Availability: InStock
Rating: 5.0 (70 reviews)

MFG Part Number: SSM3K309T(TE85L,F)

Available Quantity: 30600 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: - MOSFET N-CH 20V 4.7A TSM

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: SSM3K309T(TE85L,F).pdf

SSM3K309T(TE85L,F) Specifications

Manufacturer Part Number	SSM3K309T(TE85L,F)
Future Part Number	FT-SSM3K309T(TE85L,F)
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	-
SSM3K309T(TE85L,F) Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4V
Rds On (Max) @ Id, Vgs	31 mOhm @ 4A, 4V
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 10V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TSM
Package / Case	TO-236-3, SC-59, SOT-23-3
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
SSM3K309T(TE85L,F) Weight	Contact Us
Replacement Part Number	SSM3K309T(TE85L,F)-FT

How To Order?

Request for Quotation - Confirm Price - Order - Payment - Shipment - Done

Shipping Methods

1) DHL (1-3 days)
2) FEDEX (1-3 days)
3) UPS (1-3 days)
4) TNT (2-5 days)
5) EMS (7-10 days)
6) Normal Post (10-20 days)
7) Others
Freight Calculation: Please contact us