Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPN1R603PL,L1Q
Manufacturer Part Number | TPN1R603PL,L1Q |
---|---|
Future Part Number | FT-TPN1R603PL,L1Q |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | U-MOSIX-H |
TPN1R603PL,L1Q Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3900pF @ 15V |
FET Feature | - |
Power Dissipation (Max) | 104W (Tc) |
Operating Temperature | 175°C |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPN1R603PL,L1Q Weight | Contact Us |
Replacement Part Number | TPN1R603PL,L1Q-FT |
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