Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / TPH3207WS
Manufacturer Part Number | TPH3207WS |
---|---|
Future Part Number | FT-TPH3207WS |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
TPH3207WS Status (Lifecycle) | In Stock |
Part Status | Not For New Designs |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 41 mOhm @ 32A, 8V |
Vgs(th) (Max) @ Id | 2.65V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 8V |
Vgs (Max) | ±18V |
Input Capacitance (Ciss) (Max) @ Vds | 2197pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 178W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
TPH3207WS Weight | Contact Us |
Replacement Part Number | TPH3207WS-FT |
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