Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2908(T5L,F,T)
Manufacturer Part Number | RN2908(T5L,F,T) |
---|---|
Future Part Number | FT-RN2908(T5L,F,T) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2908(T5L,F,T) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2908(T5L,F,T) Weight | Contact Us |
Replacement Part Number | RN2908(T5L,F,T)-FT |
RN1969FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1970FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1971FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2902FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN2904FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN2906FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2961FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2962FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2963FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2964FE(TE85L,F)
Toshiba Semiconductor and Storage
EX128-PTQ64I
Microsemi Corporation
XC6SLX150T-2FGG676I
Xilinx Inc.
M2GL090-1FCSG325I
Microsemi Corporation
A54SX32A-1TQG176
Microsemi Corporation
EP4CE6F17I7
Intel
XC6VLX240T-1FFG784C
Xilinx Inc.
XC7K325T-1FF900C
Xilinx Inc.
M2GL060-FGG676
Microsemi Corporation
AGL125V5-QNG132
Microsemi Corporation
5CEBA5U19C7N
Intel