Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN2906FE(TE85L,F)
Manufacturer Part Number | RN2906FE(TE85L,F) |
---|---|
Future Part Number | FT-RN2906FE(TE85L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2906FE(TE85L,F) Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2906FE(TE85L,F) Weight | Contact Us |
Replacement Part Number | RN2906FE(TE85L,F)-FT |
RN4609(TE85L,F)
Toshiba Semiconductor and Storage
RN4602TE85LF
Toshiba Semiconductor and Storage
IMB2AT110
Rohm Semiconductor
IMB3AT110
Rohm Semiconductor
IMD2AT108
Rohm Semiconductor
IMD3AT108
Rohm Semiconductor
IMD6AT108
Rohm Semiconductor
IMD9AT108
Rohm Semiconductor
IMH21T110
Rohm Semiconductor
IMH23T110
Rohm Semiconductor