Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2312(TE85L,F)
Manufacturer Part Number | RN2312(TE85L,F) |
---|---|
Future Part Number | FT-RN2312(TE85L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2312(TE85L,F) Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | USM |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2312(TE85L,F) Weight | Contact Us |
Replacement Part Number | RN2312(TE85L,F)-FT |
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