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Toshiba Semiconductor and Storage RN1131MFV(TL3,T)

MFG Part Number
RN1131MFV(TL3,T)
Available Quantity
21350 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
- TRANS PREBIAS NPN 0.15W VESM
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - Bipolar (BJT) - Single, Pre-Biased
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
RN1131MFV(TL3,T).pdf
RN1131MFV(TL3,T) Image

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RN1131MFV(TL3,T) Specifications

Manufacturer Part Number RN1131MFV(TL3,T)
Future Part Number FT-RN1131MFV(TL3,T)
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
RN1131MFV(TL3,T) Status (Lifecycle) In Stock
Part Status Active
Transistor Type NPN - Pre-Biased
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Resistor - Base (R1) 100 kOhms
Resistor - Emitter Base (R2) -
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Frequency - Transition -
Power - Max 150mW
Mounting Type Surface Mount
Package / Case SOT-723
Supplier Device Package VESM
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
RN1131MFV(TL3,T) Weight Contact Us
Replacement Part Number RN1131MFV(TL3,T)-FT

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