Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2301,LF
Manufacturer Part Number | RN2301,LF |
---|---|
Future Part Number | FT-RN2301,LF |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2301,LF Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 200MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SC-70, SOT-323 |
Supplier Device Package | USM |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2301,LF Weight | Contact Us |
Replacement Part Number | RN2301,LF-FT |
RN1109MFV,L3F
Toshiba Semiconductor and Storage
RN1131MFV(TL3,T)
Toshiba Semiconductor and Storage
RN2104MFV,L3F
Toshiba Semiconductor and Storage
RN2107MFV,L3F
Toshiba Semiconductor and Storage
RN2118MFV(TPL3)
Toshiba Semiconductor and Storage
RN2119MFV(TPL3)
Toshiba Semiconductor and Storage
RN1406,LF
Toshiba Semiconductor and Storage
RN1402,LF
Toshiba Semiconductor and Storage
RN1404S,LF
Toshiba Semiconductor and Storage
RN1413(TE85L,F)
Toshiba Semiconductor and Storage
LFEC1E-5T144C
Lattice Semiconductor Corporation
XC3S200-4FTG256I
Xilinx Inc.
XC7K410T-2FBG676I
Xilinx Inc.
MPF300T-1FCG484E
Microsemi Corporation
XC4044XL-2HQ208I
Xilinx Inc.
XC7VX330T-1FF1157I
Xilinx Inc.
AX1000-FG676
Microsemi Corporation
AX1000-FGG676I
Microsemi Corporation
A40MX02-3PQ100I
Microsemi Corporation
EP1SGX40GF1020C7N
Intel