Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2109MFV,L3F
Manufacturer Part Number | RN2109MFV,L3F |
---|---|
Future Part Number | FT-RN2109MFV,L3F |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2109MFV,L3F Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2109MFV,L3F Weight | Contact Us |
Replacement Part Number | RN2109MFV,L3F-FT |
FJY4008R
ON Semiconductor
FJY4007R
ON Semiconductor
FJY4006R
ON Semiconductor
FJY4005R
ON Semiconductor
FJY4004R
ON Semiconductor
FJY4003R
ON Semiconductor
FJY4002R
ON Semiconductor
FJY4001R
ON Semiconductor
FJY3014R
ON Semiconductor
FJY3013R
ON Semiconductor
XC3S1600E-4FGG400I
Xilinx Inc.
XC3S400-4FT256I
Xilinx Inc.
XC2S15-5VQG100C
Xilinx Inc.
A3PE3000-1FG484I
Microsemi Corporation
M1A3P250-2PQ208
Microsemi Corporation
5SGXEA4K2F40C3N
Intel
5SGXEB6R2F43C2LN
Intel
A54SX32A-1TQG100I
Microsemi Corporation
LFEC33E-5FN484C
Lattice Semiconductor Corporation
LFE2-50SE-6FN672C
Lattice Semiconductor Corporation