Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / FJY4006R
Manufacturer Part Number | FJY4006R |
---|---|
Future Part Number | FT-FJY4006R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FJY4006R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 200MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | SC-89, SOT-490 |
Supplier Device Package | SOT-523F |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJY4006R Weight | Contact Us |
Replacement Part Number | FJY4006R-FT |
PDTA113ZT,215
Nexperia USA Inc.
PDTA114ET,215
Nexperia USA Inc.
PDTA114ET,235
Nexperia USA Inc.
PDTA114YT,215
Nexperia USA Inc.
PDTA115ET,215
Nexperia USA Inc.
PDTA115TT,215
Nexperia USA Inc.
PDTA123ETVL
Nexperia USA Inc.
PDTA123JT,215
Nexperia USA Inc.
PDTA123JTVL
Nexperia USA Inc.
PDTA123TT,215
Nexperia USA Inc.
AGL400V5-FG256I
Microsemi Corporation
M2GL005-1VFG256I
Microsemi Corporation
ICE40LM1K-SWG25TR
Lattice Semiconductor Corporation
A3PN250-VQ100
Microsemi Corporation
EP4CGX150DF27C7N
Intel
5SGXEA4K1F40C1N
Intel
LFE2-12E-6F256C
Lattice Semiconductor Corporation
LFE2-20E-6F484I
Lattice Semiconductor Corporation
10AX115R3F40E2LG
Intel
EP2AGX45DF29I3N
Intel