Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN2103MFV,L3F
Manufacturer Part Number | RN2103MFV,L3F |
---|---|
Future Part Number | FT-RN2103MFV,L3F |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN2103MFV,L3F Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 22 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | - |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-723 |
Supplier Device Package | VESM |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN2103MFV,L3F Weight | Contact Us |
Replacement Part Number | RN2103MFV,L3F-FT |
FJY4010R
ON Semiconductor
FJY4009R
ON Semiconductor
FJY4008R
ON Semiconductor
FJY4007R
ON Semiconductor
FJY4006R
ON Semiconductor
FJY4005R
ON Semiconductor
FJY4004R
ON Semiconductor
FJY4003R
ON Semiconductor
FJY4002R
ON Semiconductor
FJY4001R
ON Semiconductor
XC7A50T-2FTG256C
Xilinx Inc.
A3P250-VQ100I
Microsemi Corporation
EPF10K50VFC484-2
Intel
5SGXMA7N2F40C2N
Intel
EP4SE360H29C4N
Intel
LCMXO2-7000HE-4BG256C
Lattice Semiconductor Corporation
LFE3-150EA-6FN672CTW
Lattice Semiconductor Corporation
EP2AGX260FF35C6NES
Intel
5SGXEA3H3F35C2LN
Intel
EP1SGX25FF1020C5N
Intel