Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1909(T5L,F,T)
Manufacturer Part Number | RN1909(T5L,F,T) |
---|---|
Future Part Number | FT-RN1909(T5L,F,T) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1909(T5L,F,T) Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1909(T5L,F,T) Weight | Contact Us |
Replacement Part Number | RN1909(T5L,F,T)-FT |
RN2901FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2911FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1906FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN1910FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN1961FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1962FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1963FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1964FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1965FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1967FE(TE85L,F)
Toshiba Semiconductor and Storage
EP1K10TC144-3N
Intel
A42MX36-CQ208B
Microsemi Corporation
A3PE600-1FGG484I
Microsemi Corporation
AT40K20LV-3EQC
Microchip Technology
5SGXMA7K3F35C2LN
Intel
5SGXMA4H2F35C3N
Intel
LCMXO2-2000HC-6FTG256C
Lattice Semiconductor Corporation
LCMXO2-4000HE-5FTG256I
Lattice Semiconductor Corporation
EP2AGX260FF35I5G
Intel
EP2A70F1508C8
Intel