Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1962FE(TE85L,F)
Manufacturer Part Number | RN1962FE(TE85L,F) |
---|---|
Future Part Number | FT-RN1962FE(TE85L,F) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1962FE(TE85L,F) Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1962FE(TE85L,F) Weight | Contact Us |
Replacement Part Number | RN1962FE(TE85L,F)-FT |
RN2602(TE85L,F)
Toshiba Semiconductor and Storage
RN2605(TE85L,F)
Toshiba Semiconductor and Storage
RN2606(TE85L,F)
Toshiba Semiconductor and Storage
RN2607(TE85L,F)
Toshiba Semiconductor and Storage
RN2608(TE85L,F)
Toshiba Semiconductor and Storage
RN2610(TE85L,F)
Toshiba Semiconductor and Storage
RN4601(TE85L,F)
Toshiba Semiconductor and Storage
RN4603(TE85L,F)
Toshiba Semiconductor and Storage
RN4604(TE85L,F)
Toshiba Semiconductor and Storage
RN4607(TE85L,F)
Toshiba Semiconductor and Storage
XC6SLX75-2FGG484C
Xilinx Inc.
APA1000-FG896A
Microsemi Corporation
EPF6016ATC100-2N
Intel
LFXP6C-5Q208C
Lattice Semiconductor Corporation
LFXP20E-4F256C
Lattice Semiconductor Corporation
5CEFA2U19A7N
Intel
10AX066K2F40E1SG
Intel
10AX115N1F40E1SG
Intel
10CL120ZF780I8G
Intel
EPF10K30AQC208-2
Intel