Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN1905(T5L,F,T)
Manufacturer Part Number | RN1905(T5L,F,T) |
---|---|
Future Part Number | FT-RN1905(T5L,F,T) |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN1905(T5L,F,T) Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 200mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN1905(T5L,F,T) Weight | Contact Us |
Replacement Part Number | RN1905(T5L,F,T)-FT |
RN4984FE,LF(CT
Toshiba Semiconductor and Storage
RN4986FE,LF(CT
Toshiba Semiconductor and Storage
RN4987FE,LF(CT
Toshiba Semiconductor and Storage
RN4990FE,LF(CT
Toshiba Semiconductor and Storage
RN1901FETE85LF
Toshiba Semiconductor and Storage
RN1909FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2901FE(TE85L,F)
Toshiba Semiconductor and Storage
RN2911FE(TE85L,F)
Toshiba Semiconductor and Storage
RN1906FE(T5L,F,T)
Toshiba Semiconductor and Storage
RN1910FE(T5L,F,T)
Toshiba Semiconductor and Storage
EX256-TQ100
Microsemi Corporation
XC2VP20-5FG676I
Xilinx Inc.
XC6SLX100-3FG676C
Xilinx Inc.
XC7A12T-1CSG325I
Xilinx Inc.
LCMXO3LF-4300E-5UWG81CTR50
Lattice Semiconductor Corporation
AGL030V2-VQ100
Microsemi Corporation
EP4SGX290KF40C4N
Intel
LFXP2-8E-5FT256I
Lattice Semiconductor Corporation
ICE40LP1K-CM81TR1K
Lattice Semiconductor Corporation
EP20K400ERC240-3
Intel