Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / RN4984FE,LF(CT
Manufacturer Part Number | RN4984FE,LF(CT |
---|---|
Future Part Number | FT-RN4984FE,LF(CT |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
RN4984FE,LF(CT Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 100mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | ES6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
RN4984FE,LF(CT Weight | Contact Us |
Replacement Part Number | RN4984FE,LF(CT-FT |
PBLS6021D,115
Nexperia USA Inc.
PBLS6022D,115
Nexperia USA Inc.
PBLS6023D,115
Nexperia USA Inc.
PBLS6024D,115
Nexperia USA Inc.
PIMD2,115
Nexperia USA Inc.
PIMD2,125
Nexperia USA Inc.
RN1601(TE85L,F)
Toshiba Semiconductor and Storage
RN1604(TE85L,F)
Toshiba Semiconductor and Storage
RN1608(TE85L,F)
Toshiba Semiconductor and Storage
RN1609(TE85L,F)
Toshiba Semiconductor and Storage