Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / MUN5214DW1T1G
Manufacturer Part Number | MUN5214DW1T1G |
---|---|
Future Part Number | FT-MUN5214DW1T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5214DW1T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 NPN - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5214DW1T1G Weight | Contact Us |
Replacement Part Number | MUN5214DW1T1G-FT |
NSBC143EDXV6T1
ON Semiconductor
NSBC143EPDXV6T1
ON Semiconductor
NSBC143TDXV6T1
ON Semiconductor
NSBC143TPDXV6T1
ON Semiconductor
NSBC143TPDXV6T5G
ON Semiconductor
NSBC143ZDXV6T1
ON Semiconductor
NSBC143ZPDXV6T5
ON Semiconductor
NSBC143ZPDXV6T5G
ON Semiconductor
NSBC144EPDXV6T1
ON Semiconductor
NSBC144EPDXV6T5
ON Semiconductor
XC6SLX150-N3FG900I
Xilinx Inc.
A3P1000-FGG256T
Microsemi Corporation
A54SX08A-PQ208A
Microsemi Corporation
MPF300T-1FCG1152E
Microsemi Corporation
M2GL010T-1VFG400
Microsemi Corporation
EP2C35F672I8N
Intel
EP2C70F672C6
Intel
EPF10K200SBC600-1X
Intel
XC7VX485T-2FFG1761C
Xilinx Inc.
XA6SLX25-3CSG324Q
Xilinx Inc.