Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / NSBC143ZPDXV6T5G
Manufacturer Part Number | NSBC143ZPDXV6T5G |
---|---|
Future Part Number | FT-NSBC143ZPDXV6T5G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSBC143ZPDXV6T5G Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 4.7 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 500mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | SOT-563 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSBC143ZPDXV6T5G Weight | Contact Us |
Replacement Part Number | NSBC143ZPDXV6T5G-FT |
NSBC124EPDXV6T1G
ON Semiconductor
NSVBC123JPDXV6T1G
ON Semiconductor
NSBC124EPDXV6T5G
ON Semiconductor
NSBC144EPDXV6T5G
ON Semiconductor
NSVBC143ZPDXV6T5G
ON Semiconductor
NSVB143ZPDXV6T1G
ON Semiconductor
NSVBC114EPDXV6T1G
ON Semiconductor
EMD5DXV6T5G
ON Semiconductor
NSBC114EPDXV6T5G
ON Semiconductor
EMD4DXV6T5G
ON Semiconductor
EP20K30ETC144-3N
Intel
XC3S1500-5FG320C
Xilinx Inc.
XC4VFX100-11FFG1517I
Xilinx Inc.
A42MX36-3PQ208
Microsemi Corporation
10M40DCF256I7G
Intel
EP4CE22F17C9LN
Intel
5SGSMD5H3F35I3N
Intel
XC7VX415T-2FFG1927C
Xilinx Inc.
LFX200EB-03F256I
Lattice Semiconductor Corporation
EP2AGX125EF35C6N
Intel