Home / Products / Integrated Circuits (ICs) / Memory / MT29F2T08CUHBBM4-3R:B
Manufacturer Part Number | MT29F2T08CUHBBM4-3R:B |
---|---|
Future Part Number | FT-MT29F2T08CUHBBM4-3R:B |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29F2T08CUHBBM4-3R:B Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 2Tb (256G x 8) |
Clock Frequency | 333MHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.5V ~ 3.6V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | - |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29F2T08CUHBBM4-3R:B Weight | Contact Us |
Replacement Part Number | MT29F2T08CUHBBM4-3R:B-FT |
MT29E256G08CECCBH6-6:C
Micron Technology Inc.
MT29E256G08CECCBH6-6:C TR
Micron Technology Inc.
MT29E2T08CTCCBJ7-6:C
Micron Technology Inc.
MT29E2T08CTCCBJ7-6:C TR
Micron Technology Inc.
MT29E2T08CUHBBM4-3:B
Micron Technology Inc.
MT29E2T08CUHBBM4-3:B TR
Micron Technology Inc.
MT29E3T08EUHBBM4-3:B
Micron Technology Inc.
MT29E3T08EUHBBM4-3:B TR
Micron Technology Inc.
MT29E4T08CTHBBM5-3:B
Micron Technology Inc.
MT29E4T08CTHBBM5-3:B TR
Micron Technology Inc.
XC4006E-3TQ144C
Xilinx Inc.
XC6SLX150T-N3FGG900C
Xilinx Inc.
LFE3-17EA-6FTN256I
Lattice Semiconductor Corporation
10M08DCF484I7G
Intel
EP3CLS150F484C8
Intel
EP4CE115F23C7
Intel
XC2VP20-6FFG1152I
Xilinx Inc.
LCMXO2-4000HE-6BG256I
Lattice Semiconductor Corporation
10AX027E2F27E1HG
Intel
EP4SGX360HF35I3N
Intel