Home / Products / Integrated Circuits (ICs) / Memory / MT29E2T08CTCCBJ7-6:C
Manufacturer Part Number | MT29E2T08CTCCBJ7-6:C |
---|---|
Future Part Number | FT-MT29E2T08CTCCBJ7-6:C |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MT29E2T08CTCCBJ7-6:C Status (Lifecycle) | In Stock |
Part Status | Active |
Memory Type | Non-Volatile |
Memory Format | FLASH |
Technology | FLASH - NAND |
Memory Size | 2Tb (256G x 8) |
Clock Frequency | 167MHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.7V ~ 3.6V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | Surface Mount |
Package / Case | - |
Supplier Device Package | - |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MT29E2T08CTCCBJ7-6:C Weight | Contact Us |
Replacement Part Number | MT29E2T08CTCCBJ7-6:C-FT |
MT53D512M64D4SB-046 XT:E
Micron Technology Inc.
MT53D768M64D8NZ-046 WT:E
Micron Technology Inc.
MT53D768M64D8NZ-046 WT:E TR
Micron Technology Inc.
MT53E1G32D4NQ-053 WT:E
Micron Technology Inc.
MT53E1G32D4NQ-053 WT:E TR
Micron Technology Inc.
MT53E2G32D8QD-053 WT:E
Micron Technology Inc.
MT53E2G32D8QD-053 WT:E TR
Micron Technology Inc.
MT53E512M32D2NP-046 WT:E
Micron Technology Inc.
MT53E512M32D2NP-046 WT:E TR
Micron Technology Inc.
MT53E512M64D4NW-053 WT:E
Micron Technology Inc.
XC3S50A-4VQ100C
Xilinx Inc.
XC6SLX150T-2FG484I
Xilinx Inc.
M1A3P600-1FGG484
Microsemi Corporation
A3P125-2PQ208I
Microsemi Corporation
5AGZME5K3F40I4N
Intel
10CX150YF672E5G
Intel
AX500-FGG676M
Microsemi Corporation
A3P1000-FGG144I
Microsemi Corporation
A54SX32A-2FGG144
Microsemi Corporation
LCMXO3LF-9400C-5BG256I
Lattice Semiconductor Corporation