Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / MCMN2012-TP
Manufacturer Part Number | MCMN2012-TP |
---|---|
Future Part Number | FT-MCMN2012-TP |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MCMN2012-TP Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
Rds On (Max) @ Id, Vgs | 11 mOhm @ 9.7A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 32nC @ 5V |
Vgs (Max) | ±10V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 4V |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN2020-6J |
Package / Case | 6-WDFN Exposed Pad |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MCMN2012-TP Weight | Contact Us |
Replacement Part Number | MCMN2012-TP-FT |
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