Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / MC1413BDR2G
Manufacturer Part Number | MC1413BDR2G |
---|---|
Future Part Number | FT-MC1413BDR2G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MC1413BDR2G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 7 NPN Darlington |
Current - Collector (Ic) (Max) | 500mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 500µA, 350mA |
Current - Collector Cutoff (Max) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 350mA, 2V |
Power - Max | - |
Frequency - Transition | - |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 16-SOIC (0.154", 3.90mm Width) |
Supplier Device Package | 16-SOIC |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MC1413BDR2G Weight | Contact Us |
Replacement Part Number | MC1413BDR2G-FT |
HN1B01F-GR(TE85L,F
Toshiba Semiconductor and Storage
HN1B01FDW1T1
ON Semiconductor
HN1B04F(TE85L,F)
Toshiba Semiconductor and Storage
IMT17T110
Rohm Semiconductor
IMT17T208
Rohm Semiconductor
IMT1AT108
Rohm Semiconductor
IMT3AT108
Rohm Semiconductor
IMX17T108
Rohm Semiconductor
IMX17T110
Rohm Semiconductor
IMX1T108
Rohm Semiconductor
XC2V1000-5FGG256C
Xilinx Inc.
A54SX08A-PQG208
Microsemi Corporation
EPF10K100EFC256-2
Intel
XC4005XL-3PC84C
Xilinx Inc.
XC7K70T-2FBG484C
Xilinx Inc.
XC6VLX240T-1FFG1759C
Xilinx Inc.
LFXP20C-3FN256I
Lattice Semiconductor Corporation
EPF10K50VBC356-1
Intel
EP20K60EFC324-3
Intel
EPF10K70RC240-4N
Intel