Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays / HN1B01F-GR(TE85L,F
Manufacturer Part Number | HN1B01F-GR(TE85L,F |
---|---|
Future Part Number | FT-HN1B01F-GR(TE85L,F |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
HN1B01F-GR(TE85L,F Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN, PNP |
Current - Collector (Ic) (Max) | 150mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 300mW |
Frequency - Transition | 120MHz |
Operating Temperature | 125°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SC-74, SOT-457 |
Supplier Device Package | SM6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
HN1B01F-GR(TE85L,F Weight | Contact Us |
Replacement Part Number | HN1B01F-GR(TE85L,F-FT |
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