Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / JANTXV2N6849

            | Manufacturer Part Number | JANTXV2N6849 | 
|---|---|
| Future Part Number | FT-JANTXV2N6849 | 
| SPQ / MOQ | Contact Us | 
| Packing Material | Reel/Tray/Tube/Others | 
| Series | Military, MIL-PRF-19500/564 | 
| JANTXV2N6849 Status (Lifecycle) | In Stock | 
| Part Status | Obsolete | 
| FET Type | P-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 100V | 
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 320 mOhm @ 6.5A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 34.8nC @ 10V | 
| Vgs (Max) | ±20V | 
| Input Capacitance (Ciss) (Max) @ Vds | - | 
| FET Feature | - | 
| Power Dissipation (Max) | 800mW (Ta), 25W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Through Hole | 
| Supplier Device Package | TO-205AF (TO-39) | 
| Package / Case | TO-205AF Metal Can | 
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN | 
| JANTXV2N6849 Weight | Contact Us | 
| Replacement Part Number | JANTXV2N6849-FT | 

JAN2N6796U
Microsemi Corporation

JAN2N6798
Microsemi Corporation

JAN2N6798U
Microsemi Corporation

JAN2N6800
Microsemi Corporation

JAN2N6800U
Microsemi Corporation

JAN2N6802
Microsemi Corporation

JAN2N6802U
Microsemi Corporation

JAN2N6804
Microsemi Corporation

JAN2N6849
Microsemi Corporation

JAN2N6849U
Microsemi Corporation

XC6SLX100T-N3FG900C
Xilinx Inc.

M2GL050TS-1FGG484I
Microsemi Corporation

EP2A40F672C7
Intel

EP3SL200F1517C4
Intel

XC7A200T-2FB484I
Xilinx Inc.

XC6VCX195T-1FFG1156I
Xilinx Inc.

LFEC33E-3FN484C
Lattice Semiconductor Corporation

EPF10K10LC84-4
Intel

EPF81188ARC240-2
Intel

EP1C12Q240C7
Intel