Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / JAN2N6849
Manufacturer Part Number | JAN2N6849 |
---|---|
Future Part Number | FT-JAN2N6849 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/564 |
JAN2N6849 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 320 mOhm @ 6.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 34.8nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | 800mW (Ta), 25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-39 |
Package / Case | TO-205AF Metal Can |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N6849 Weight | Contact Us |
Replacement Part Number | JAN2N6849-FT |
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