Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTXV2N3636
Manufacturer Part Number | JANTXV2N3636 |
---|---|
Future Part Number | FT-JANTXV2N3636 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/357 |
JANTXV2N3636 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 175V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 50mA, 10V |
Power - Max | 1W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-39 |
Supplier Device Package | TO-39 (TO-205AD) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N3636 Weight | Contact Us |
Replacement Part Number | JANTXV2N3636-FT |
JANTX2N2905
Microsemi Corporation
JANTX2N2906AL
Microsemi Corporation
JANTX2N2907AUA/TR
Microsemi Corporation
JANTX2N2907AUB/TR
Microsemi Corporation
JANTX2N2944A
Microsemi Corporation
JANTX2N3019/TR
Microsemi Corporation
JANTX2N3250A
Microsemi Corporation
JANTX2N3251AUB
Microsemi Corporation
JANTX2N3420
Microsemi Corporation
JANTX2N3421S
Microsemi Corporation
XC3164A-3TQ144C
Xilinx Inc.
LCMXO1200C-3T144I
Lattice Semiconductor Corporation
XA7A25T-2CSG325I
Xilinx Inc.
M1A3P600-PQ208
Microsemi Corporation
5SEE9F45C2N
Intel
EP2SGX90EF1152C4ES
Intel
XC2V1500-5BGG575C
Xilinx Inc.
XC5VLX110-2FF1760C
Xilinx Inc.
LCMXO2-2000HC-5MG132C
Lattice Semiconductor Corporation
EP2AGX190EF29C5N
Intel