Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTX2N3250A
Manufacturer Part Number | JANTX2N3250A |
---|---|
Future Part Number | FT-JANTX2N3250A |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/323 |
JANTX2N3250A Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 200mA |
Voltage - Collector Emitter Breakdown (Max) | 60V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 1V |
Power - Max | 360mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 (TO-205AD) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTX2N3250A Weight | Contact Us |
Replacement Part Number | JANTX2N3250A-FT |
JAN2N5005
Microsemi Corporation
JAN2N5012
Microsemi Corporation
JAN2N5012S
Microsemi Corporation
JAN2N5013
Microsemi Corporation
JAN2N5013S
Microsemi Corporation
JAN2N5014
Microsemi Corporation
JAN2N5014S
Microsemi Corporation
JAN2N5015
Microsemi Corporation
JAN2N5015S
Microsemi Corporation
JAN2N5038
Microsemi Corporation
XA7A100T-1FGG484I
Xilinx Inc.
A3PE600-1FG484I
Microsemi Corporation
EP4CE10F17C8LN
Intel
5SGXEA4H2F35C1N
Intel
EP3SE110F1152C2N
Intel
XCS10XL-5PC84C
Xilinx Inc.
XC4VLX25-11FFG676I
Xilinx Inc.
M2GL060T-FGG676
Microsemi Corporation
LFE3-70E-6FN1156C
Lattice Semiconductor Corporation
EP1S60B956C7
Intel