Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTX2N5667S
Manufacturer Part Number | JANTX2N5667S |
---|---|
Future Part Number | FT-JANTX2N5667S |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/455 |
JANTX2N5667S Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
Current - Collector Cutoff (Max) | 200nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 5V |
Power - Max | 1.2W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 (TO-205AD) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTX2N5667S Weight | Contact Us |
Replacement Part Number | JANTX2N5667S-FT |
JAN2N708
Microsemi Corporation
JAN2N718A
Microsemi Corporation
JAN2N7370
Microsemi Corporation
JAN2N7372
Microsemi Corporation
JAN2N7373
Microsemi Corporation
JAN2N918
Microsemi Corporation
JANS2N3439U4
Microsemi Corporation
JANS2N3439UA
Microsemi Corporation
JANS2N3440
Microsemi Corporation
JANS2N3440U4
Microsemi Corporation
LFXP2-5E-6TN144I
Lattice Semiconductor Corporation
XC3S1200E-5FT256C
Xilinx Inc.
AGL600V5-FGG256I
Microsemi Corporation
A54SX08A-2PQG208
Microsemi Corporation
ICE40LP1K-QN84
Lattice Semiconductor Corporation
LFE5U-85F-8BG756C
Lattice Semiconductor Corporation
EP2AGX260EF29I5N
Intel
EPF10K50VBI356-4
Intel
EP20K160EQC240-3N
Intel
EPF10K30EQC208-2N
Intel