Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N918
Manufacturer Part Number | JAN2N918 |
---|---|
Future Part Number | FT-JAN2N918 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/301 |
JAN2N918 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 50mA |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3mA, 1V |
Power - Max | 200mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-72-3 Metal Can |
Supplier Device Package | TO-72 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N918 Weight | Contact Us |
Replacement Part Number | JAN2N918-FT |
JAN2N1016B
Microsemi Corporation
JAN2N1016C
Microsemi Corporation
JAN2N1016D
Microsemi Corporation
JAN2N1479
Microsemi Corporation
JAN2N1485
Microsemi Corporation
JAN2N1486
Microsemi Corporation
JAN2N1489
Microsemi Corporation
JAN2N1613
Microsemi Corporation
JAN2N1711
Microsemi Corporation
JAN2N2218A
Microsemi Corporation