Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTX2N3637UB
Manufacturer Part Number | JANTX2N3637UB |
---|---|
Future Part Number | FT-JANTX2N3637UB |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/357 |
JANTX2N3637UB Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 175V |
Vce Saturation (Max) @ Ib, Ic | 600mV @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 50mA, 10V |
Power - Max | 1.5W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, No Lead |
Supplier Device Package | 3-SMD |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTX2N3637UB Weight | Contact Us |
Replacement Part Number | JANTX2N3637UB-FT |
JAN2N5416S
Microsemi Corporation
JAN2N5416UA
Microsemi Corporation
JAN2N5662
Microsemi Corporation
JAN2N5663
Microsemi Corporation
JAN2N5666S
Microsemi Corporation
JAN2N5667S
Microsemi Corporation
JAN2N5671
Microsemi Corporation
JAN2N5683
Microsemi Corporation
JAN2N5684
Microsemi Corporation
JAN2N5685
Microsemi Corporation
EPF10K30ETI144-3
Intel
LFXP3C-4TN100I
Lattice Semiconductor Corporation
XA7A75T-1FGG484Q
Xilinx Inc.
EP1S20F672C7N
Intel
EP2AGZ225HF40I4N
Intel
EP2AGX65DF25I5
Intel
5SGSMD8N2F45C2N
Intel
XC5VLX50T-1FFG1136C
Xilinx Inc.
LFEC10E-3QN208I
Lattice Semiconductor Corporation
EPF8452ALC84-2
Intel