Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N5416S
Manufacturer Part Number | JAN2N5416S |
---|---|
Future Part Number | FT-JAN2N5416S |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/485 |
JAN2N5416S Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 1A |
Voltage - Collector Emitter Breakdown (Max) | 300V |
Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
Power - Max | 750mW |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 (TO-205AD) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N5416S Weight | Contact Us |
Replacement Part Number | JAN2N5416S-FT |
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