Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N2880
Manufacturer Part Number | JAN2N2880 |
---|---|
Future Part Number | FT-JAN2N2880 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/315 |
JAN2N2880 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 5A |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Vce Saturation (Max) @ Ib, Ic | 1.5V @ 500mA, 5A |
Current - Collector Cutoff (Max) | 20µA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 2V |
Power - Max | 2W |
Frequency - Transition | - |
Operating Temperature | -65°C ~ 200°C (TJ) |
Mounting Type | Stud Mount |
Package / Case | TO-210AA, TO-59-4, Stud |
Supplier Device Package | TO-59 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N2880 Weight | Contact Us |
Replacement Part Number | JAN2N2880-FT |
JANTXV2N2880
Microsemi Corporation
TSC497CX RFG
Taiwan Semiconductor Corporation
2N328A
Microsemi Corporation
2N329A
Microsemi Corporation
HS2222A
Microsemi Corporation
HS2369A
Microsemi Corporation
HS2907A
Microsemi Corporation
JAN2N2218
Microsemi Corporation
JAN2N2218AL
Microsemi Corporation
JAN2N2221AL
Microsemi Corporation
LCMXO2-256ZE-1TG100C
Lattice Semiconductor Corporation
XC3S1000L-4FGG320C
Xilinx Inc.
M7A3P1000-PQG208
Microsemi Corporation
A1020B-PL68I
Microsemi Corporation
XC5VLX110T-2FFG1136C
Xilinx Inc.
M1AFS1500-2FGG676I
Microsemi Corporation
LFXP6C-3Q208I
Lattice Semiconductor Corporation
LFE2-20SE-6F256C
Lattice Semiconductor Corporation
10AX066H4F34I3LG
Intel
EP4SGX110FF35C4N
Intel