Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JAN2N2218
Manufacturer Part Number | JAN2N2218 |
---|---|
Future Part Number | FT-JAN2N2218 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/251 |
JAN2N2218 Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | NPN |
Current - Collector (Ic) (Max) | 800mA |
Voltage - Collector Emitter Breakdown (Max) | 30V |
Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
Current - Collector Cutoff (Max) | 10nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
Power - Max | 800mW |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 200°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-205AD, TO-39-3 Metal Can |
Supplier Device Package | TO-39 (TO-205AD) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JAN2N2218 Weight | Contact Us |
Replacement Part Number | JAN2N2218-FT |
DXTP3C100PSQ-13
Diodes Incorporated
DXTP3C60PSQ-13
Diodes Incorporated
ZXT951KQTC
Diodes Incorporated
TS13005CK C0G
Taiwan Semiconductor Corporation
BC546A
Central Semiconductor Corp
CZTA14 BK
Central Semiconductor Corp
2N4264
Central Semiconductor Corp
BF393
Central Semiconductor Corp
DXTN07100BP5Q-13
Diodes Incorporated
CZT4033 BK
Central Semiconductor Corp
LCMXO2-2000HE-5TG144C
Lattice Semiconductor Corporation
XA3S1600E-4FGG484I
Xilinx Inc.
M2GL005-1VF400I
Microsemi Corporation
LCMXO640E-3FTN256C
Lattice Semiconductor Corporation
EP3SE50F484C2
Intel
EP4CE6E22C8N
Intel
LFE2-50E-5F672I
Lattice Semiconductor Corporation
LCMXO2280E-4FTN324I
Lattice Semiconductor Corporation
5AGXMB3G6F35C6N
Intel
EP4CE30F29I7N
Intel