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Infineon Technologies IRFHM830TR2PBF

Name: IRFHM830TR2PBF
Brand: Infineon Technologies
SKU: IRFHM830TR2PBF
Availability: InStock
Rating: 4.9 (397 reviews)

MFG Part Number: IRFHM830TR2PBF

Available Quantity: 99430 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: HEXFET® MOSFET N-CH 30V 21A PQFN

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IRFHM830TR2PBF.pdf

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IRFHM830TR2PBF Specifications

Manufacturer Part Number	IRFHM830TR2PBF
Future Part Number	FT-IRFHM830TR2PBF
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	HEXFET®
IRFHM830TR2PBF Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	31nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2155pF @ 25V
FET Feature	-
Power Dissipation (Max)	2.7W (Ta), 37W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PQFN (3x3)
Package / Case	8-VQFN Exposed Pad
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IRFHM830TR2PBF Weight	Contact Us
Replacement Part Number	IRFHM830TR2PBF-FT

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