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IRFHM830DTR2PBF Image

Infineon Technologies IRFHM830DTR2PBF

MFG Part Number
IRFHM830DTR2PBF
Available Quantity
19370 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
HEXFET® MOSFET N-CH 30V 20A PQFN
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IRFHM830DTR2PBF.pdf
IRFHM830DTR2PBF Image

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IRFHM830DTR2PBF Specifications

Manufacturer Part Number IRFHM830DTR2PBF
Future Part Number FT-IRFHM830DTR2PBF
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series HEXFET®
IRFHM830DTR2PBF Status (Lifecycle) In Stock
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1797pF @ 25V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 37W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PQFN (3x3)
Package / Case 8-VQFN Exposed Pad
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IRFHM830DTR2PBF Weight Contact Us
Replacement Part Number IRFHM830DTR2PBF-FT

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