Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPP60R080P7XKSA1
Manufacturer Part Number | IPP60R080P7XKSA1 |
---|---|
Future Part Number | FT-IPP60R080P7XKSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ P7 |
IPP60R080P7XKSA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 37A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 80 mOhm @ 11.8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 590µA |
Gate Charge (Qg) (Max) @ Vgs | 51nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2180pF @ 400V |
FET Feature | - |
Power Dissipation (Max) | 129W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3 |
Package / Case | TO-220-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPP60R080P7XKSA1 Weight | Contact Us |
Replacement Part Number | IPP60R080P7XKSA1-FT |
IPB180N04S302ATMA1
Infineon Technologies
IPB180N04S4L01ATMA1
Infineon Technologies
IPB180N04S4LH0ATMA1
Infineon Technologies
IPB180N06S4H1ATMA1
Infineon Technologies
IPB180N06S4H1ATMA2
Infineon Technologies
IPB180N08S402ATMA1
Infineon Technologies
IPB180N10S402ATMA1
Infineon Technologies
IPB180N10S403ATMA1
Infineon Technologies
IPB180P04P403ATMA1
Infineon Technologies
IPB180P04P4L02ATMA1
Infineon Technologies
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel