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Infineon Technologies IPB180N04S4L01ATMA1

Name: IPB180N04S4L01ATMA1
Brand: Infineon Technologies
SKU: IPB180N04S4L01ATMA1
Price: 1.098512 USD
Availability: InStock
Rating: 4.8 (139 reviews)

MFG Part Number: IPB180N04S4L01ATMA1

Available Quantity: 42380 Pieces

Reference Price: USD 1.098512

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: Automotive, AEC-Q101, OptiMOS™ MOSFET N-CH TO263-7

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPB180N04S4L01ATMA1.pdf

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IPB180N04S4L01ATMA1 Specifications

Manufacturer Part Number	IPB180N04S4L01ATMA1
Future Part Number	FT-IPB180N04S4L01ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	Automotive, AEC-Q101, OptiMOS™
IPB180N04S4L01ATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	1.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	2.2V @ 140µA
Gate Charge (Qg) (Max) @ Vgs	245nC @ 10V
Vgs (Max)	+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds	19100pF @ 25V
FET Feature	-
Power Dissipation (Max)	188W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-7-3
Package / Case	TO-263-7, D²Pak (6 Leads + Tab)
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPB180N04S4L01ATMA1 Weight	Contact Us
Replacement Part Number	IPB180N04S4L01ATMA1-FT

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