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Infineon Technologies IPP037N08N3GE8181XKSA1

Name: IPP037N08N3GE8181XKSA1
Brand: Infineon Technologies
SKU: IPP037N08N3GE8181XKSA1
Availability: InStock
Rating: 4.7 (330 reviews)

MFG Part Number: IPP037N08N3GE8181XKSA1

Available Quantity: 46270 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 80V 100A TO220-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPP037N08N3GE8181XKSA1.pdf

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IPP037N08N3GE8181XKSA1 Specifications

Manufacturer Part Number	IPP037N08N3GE8181XKSA1
Future Part Number	FT-IPP037N08N3GE8181XKSA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IPP037N08N3GE8181XKSA1 Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	3.75 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.5V @ 155µA
Gate Charge (Qg) (Max) @ Vgs	117nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	8110pF @ 40V
FET Feature	-
Power Dissipation (Max)	214W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPP037N08N3GE8181XKSA1 Weight	Contact Us
Replacement Part Number	IPP037N08N3GE8181XKSA1-FT

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