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Infineon Technologies IPP086N10N3GXKSA1

Name: IPP086N10N3GXKSA1
Brand: Infineon Technologies
SKU: IPP086N10N3GXKSA1
Price: 1.48 USD
Availability: InStock
Rating: 4.5 (54 reviews)

MFG Part Number: IPP086N10N3GXKSA1

Available Quantity: 67540 Pieces

Reference Price: USD 1.48

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 100V 80A TO220-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPP086N10N3GXKSA1.pdf

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IPP086N10N3GXKSA1 Specifications

Manufacturer Part Number	IPP086N10N3GXKSA1
Future Part Number	FT-IPP086N10N3GXKSA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IPP086N10N3GXKSA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	8.6 mOhm @ 73A, 10V
Vgs(th) (Max) @ Id	3.5V @ 75µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3980pF @ 50V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPP086N10N3GXKSA1 Weight	Contact Us
Replacement Part Number	IPP086N10N3GXKSA1-FT

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