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Infineon Technologies IPD80R2K8CEATMA1

MFG Part Number
IPD80R2K8CEATMA1
Available Quantity
73780 Pieces
Reference Price
USD 0.37728
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
CoolMOS™ CE MOSFET N-CH 800V 1.9A TO252-3
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IPD80R2K8CEATMA1.pdf
IPD80R2K8CEATMA1 Image

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IPD80R2K8CEATMA1 Specifications

Manufacturer Part Number IPD80R2K8CEATMA1
Future Part Number FT-IPD80R2K8CEATMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series CoolMOS™ CE
IPD80R2K8CEATMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.8 Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 3.9V @ 120µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 100V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IPD80R2K8CEATMA1 Weight Contact Us
Replacement Part Number IPD80R2K8CEATMA1-FT

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