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Infineon Technologies IPD60R3K4CEAUMA1

MFG Part Number
IPD60R3K4CEAUMA1
Available Quantity
37630 Pieces
Reference Price
USD 0.141312
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
- MOSFET N-CH 650V 2.6A TO252-3
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IPD60R3K4CEAUMA1.pdf
IPD60R3K4CEAUMA1 Image

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IPD60R3K4CEAUMA1 Specifications

Manufacturer Part Number IPD60R3K4CEAUMA1
Future Part Number FT-IPD60R3K4CEAUMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series -
IPD60R3K4CEAUMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.4 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 4.6nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 93pF @ 100V
FET Feature -
Power Dissipation (Max) 29W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IPD60R3K4CEAUMA1 Weight Contact Us
Replacement Part Number IPD60R3K4CEAUMA1-FT

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