Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPC26N12NX1SA1
Manufacturer Part Number | IPC26N12NX1SA1 |
---|---|
Future Part Number | FT-IPC26N12NX1SA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPC26N12NX1SA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 1A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id | 4V @ 244µA |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
FET Feature | - |
Power Dissipation (Max) | - |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | Sawn on foil |
Package / Case | Die |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPC26N12NX1SA1 Weight | Contact Us |
Replacement Part Number | IPC26N12NX1SA1-FT |
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