Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD60R1K4C6
Manufacturer Part Number | IPD60R1K4C6 |
---|---|
Future Part Number | FT-IPD60R1K4C6 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ |
IPD60R1K4C6 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4 Ohm @ 1.1A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 28.4W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD60R1K4C6 Weight | Contact Us |
Replacement Part Number | IPD60R1K4C6-FT |
IPD110N12N3GBUMA1
Infineon Technologies
IPD122N10N3GATMA1
Infineon Technologies
IPD122N10N3GBTMA1
Infineon Technologies
IPD127N06LGBTMA1
Infineon Technologies
IPD12CN10NGATMA1
Infineon Technologies
IPD12CN10NGBUMA1
Infineon Technologies
IPD12CNE8N G
Infineon Technologies
IPD12N03LB G
Infineon Technologies
IPD135N03LGXT
Infineon Technologies
IPD135N08N3GBTMA1
Infineon Technologies
XC3S400-5FTG256C
Xilinx Inc.
XC7A25T-1CSG325C
Xilinx Inc.
A3P1000L-1FG256
Microsemi Corporation
LCMXO3L-4300E-5UWG81CTR50
Lattice Semiconductor Corporation
5SGXEA3K1F35I2N
Intel
XC4020E-3HQ208I
Xilinx Inc.
XC7VX415T-2FFG1158I
Xilinx Inc.
XC7VX550T-1FFG1158C
Xilinx Inc.
XCKU5P-1SFVB784I
Xilinx Inc.
LFXP10C-5F256C
Lattice Semiconductor Corporation