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Infineon Technologies IPD110N12N3GBUMA1

MFG Part Number
IPD110N12N3GBUMA1
Available Quantity
98090 Pieces
Reference Price
USD 0
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
OptiMOS™ MOSFET N-CH 120V 75A TO252-3
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IPD110N12N3GBUMA1.pdf
IPD110N12N3GBUMA1 Image

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IPD110N12N3GBUMA1 Specifications

Manufacturer Part Number IPD110N12N3GBUMA1
Future Part Number FT-IPD110N12N3GBUMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series OptiMOS™
IPD110N12N3GBUMA1 Status (Lifecycle) In Stock
Part Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 120V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11 mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4310pF @ 60V
FET Feature -
Power Dissipation (Max) 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IPD110N12N3GBUMA1 Weight Contact Us
Replacement Part Number IPD110N12N3GBUMA1-FT

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