Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD600N25N3GATMA1
Manufacturer Part Number | IPD600N25N3GATMA1 |
---|---|
Future Part Number | FT-IPD600N25N3GATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPD600N25N3GATMA1 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 25A, 10V |
Vgs(th) (Max) @ Id | 4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2350pF @ 100V |
FET Feature | - |
Power Dissipation (Max) | 136W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD600N25N3GATMA1 Weight | Contact Us |
Replacement Part Number | IPD600N25N3GATMA1-FT |
IPD105N04LGBTMA1
Infineon Technologies
IPD10N03LA
Infineon Technologies
IPD10N03LA G
Infineon Technologies
IPD110N12N3GATMA1
Infineon Technologies
IPD110N12N3GBUMA1
Infineon Technologies
IPD122N10N3GATMA1
Infineon Technologies
IPD122N10N3GBTMA1
Infineon Technologies
IPD127N06LGBTMA1
Infineon Technologies
IPD12CN10NGATMA1
Infineon Technologies
IPD12CN10NGBUMA1
Infineon Technologies
LCMXO2-640HC-4SG48C
Lattice Semiconductor Corporation
A54SX32A-1TQG144
Microsemi Corporation
XC6SLX75T-4FGG484C
Xilinx Inc.
A3P600L-1FGG484
Microsemi Corporation
MPF300T-FCG1152E
Microsemi Corporation
A40MX04-FPL68
Microsemi Corporation
AGLN250V5-VQ100I
Microsemi Corporation
5SGXMA7N2F45C3N
Intel
LFXP6E-3Q208C
Lattice Semiconductor Corporation
5SGSMD4H3F35C4N
Intel