Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPD50R950CEBTMA1
Manufacturer Part Number | IPD50R950CEBTMA1 |
---|---|
Future Part Number | FT-IPD50R950CEBTMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | CoolMOS™ |
IPD50R950CEBTMA1 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 13V |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 1.2A, 13V |
Vgs(th) (Max) @ Id | 3.5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 231pF @ 100V |
FET Feature | Super Junction |
Power Dissipation (Max) | 34W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPD50R950CEBTMA1 Weight | Contact Us |
Replacement Part Number | IPD50R950CEBTMA1-FT |
IPD09N03LB G
Infineon Technologies
IPD100N06S403ATMA1
Infineon Technologies
IPD100N06S403ATMA2
Infineon Technologies
IPD105N03LGATMA1
Infineon Technologies
IPD105N04LGBTMA1
Infineon Technologies
IPD10N03LA
Infineon Technologies
IPD10N03LA G
Infineon Technologies
IPD110N12N3GATMA1
Infineon Technologies
IPD110N12N3GBUMA1
Infineon Technologies
IPD122N10N3GATMA1
Infineon Technologies
EX64-TQ100I
Microsemi Corporation
M2GL090T-FCSG325I
Microsemi Corporation
M1AFS600-2FG256I
Microsemi Corporation
5SGXMA7N2F40I3N
Intel
XCS05-3PC84C
Xilinx Inc.
XC2V4000-5FFG1152I
Xilinx Inc.
AGL600V5-FGG144
Microsemi Corporation
EP3SL150F780C4LN
Intel
EPF10K30RC240-4N
Intel
EP1S60F1020C5N
Intel