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Infineon Technologies IPD088N06N3GBTMA1

MFG Part Number
IPD088N06N3GBTMA1
Available Quantity
31780 Pieces
Reference Price
USD 0.3542
Our Price
We have a big discount, please contact us
Shipping Date
We can ship out today
Manufacturer
Infineon Technologies
Brief Description
OptiMOS™ MOSFET N-CH 60V 50A TO252-3
Lead Free Status / RoHS Status
RoHS Compliant (Lead Free)
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Date Code (D/C)
New
Product Category
Transistors - FETs, MOSFETs - Single
Stock Resource
Franchised Distributor
Warranty
360 days quality guarantee
Datasheet
IPD088N06N3GBTMA1.pdf
IPD088N06N3GBTMA1 Image

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IPD088N06N3GBTMA1 Specifications

Manufacturer Part Number IPD088N06N3GBTMA1
Future Part Number FT-IPD088N06N3GBTMA1
SPQ / MOQ Contact Us
Packing Material Reel/Tray/Tube/Others
Series OptiMOS™
IPD088N06N3GBTMA1 Status (Lifecycle) In Stock
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 8.8 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 30V
FET Feature -
Power Dissipation (Max) 71W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Country of Origin USA/JAPAN/MALAYSIA/MEXICO/CN
IPD088N06N3GBTMA1 Weight Contact Us
Replacement Part Number IPD088N06N3GBTMA1-FT

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