Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / IPB80N06S2L09ATMA1
Manufacturer Part Number | IPB80N06S2L09ATMA1 |
---|---|
Future Part Number | FT-IPB80N06S2L09ATMA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | OptiMOS™ |
IPB80N06S2L09ATMA1 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 52A, 10V |
Vgs(th) (Max) @ Id | 2V @ 125µA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 2620pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 190W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
IPB80N06S2L09ATMA1 Weight | Contact Us |
Replacement Part Number | IPB80N06S2L09ATMA1-FT |
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